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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) *High Switching Speed APPLICATIONS *Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. *Switching regulators *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B MJ13333 PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak w w scs .i w VALUE 700 400 6 20 30 10 15 175 200 -65~200 UNIT V V V .cn mi e A A A A W IBM PC TJ Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 10A; IB=2A IC= 10A; IB=2A,TC=100 IC= 20A; IB=6.7A IC= 10A; IB= 2A IC= 10A; IB= 2A,TC=100 VCEV=400V;VBE(off)=1.5V VCEV=400V;VBE(off)=1.5V;TC=150 VCE= 400V; RBE= 50,TC= 100 VEB= 6V; IC=0 MIN 400 MJ13333 TYP. MAX UNIT V 1.8 2.4 5 1.8 1.8 0.25 5.0 5.0 1 60 40 500 V V V mA mA mA Switching times;Resistive Load td tr ts tf Delay Time Rise Time ww w scs .i IC= 5A ; VCE= 5V IC= 0.3A ;VCE= 10V; ftest=1MHz IE= 0; VCB= 10V; ftest=1kHz .cn mi e 10 5 125 0.02 0.3 1.6 0.3 MHz pF 0.1 0.7 4.0 0.7 s s s s Storage Time Fall Time IC= 10A , VCC= 250V; IB1=2A VBE(off)= 5V; tp= 10s; Duty Cycle2.0% isc Websitewww.iscsemi.cn 2 |
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